brt11/ 12/ 13 document number 83689 rev. 1.4, 11-apr-05 vishay semiconductors www.vishay.com 1 i179041 1 2 3 6 5 4 mt2 mt1 nc a c nc optocoupler, phototriac output features ?i trms = 300 ma high static dv crq /dt < 10,000 v/ s electrically insulated between input and output circuit microcomputer compatible - very low trigger current non-zero voltage detectors high input sensitivity lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code j din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications industrial controls office equipment consumer appliances description the brt11/12/13 are ac optocouplers non-zero volt- age detectors consisting of two electrically insulated lateral power ics which int egrate a thyristor system, a photo detector and noise suppression at the output and an ir gaas diode input. order information for additional information on t he available options refer to option information. part remarks brt12-f 600 v v drm , 1.2 ma i ft , dip-6 brt11-h 400 v v drm , 2 ma i ft , dip-6 brt12-h 600 v v drm , 2 ma i ft , dip-6 brt13-h 800 v v drm , 2 ma i ft , dip-6 brt11-m 400 v v drm , 3 ma i ft , dip-6 brt12-m 600 v v drm , 3 ma i ft , dip-6 brt13-m 800 v v drm , 3 ma i ft , dip-6 brt12-f-x006 600 v v drm , 1.2 ma i ft , dip-6 400 mil (option 6) brt12-f-x007 600 v v drm , 1.2 ma i ft , dip-6 400 mil (option 7) brt12-h-x006 600 v v drm , 2 ma i ft , dip-6 400 mil (option 6) brt12-h-x007 600 v v drm , 2 ma i ft , smd-6 (option 7) brt12-h-x009 600 v v drm , 2 ma i ft , smd-6 (option 9) brt13-h-x006 800 v v drm , 2 ma i ft , dip-6 400 mil (option 6) brt13-h-x007 800 v v drm , 2 ma i ft , smd-6 (option 7) brt13-h-x009 800 v v drm , 2 ma i ft , smd-6 (option 9) brt12-m-x006 600 v v drm , 3 ma i ft , dip-6 400 mil (option 6) e3
www.vishay.com 2 document number 83689 rev. 1.4, 11-apr-05 brt11/ 12/ 13 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler 1) test ac voltage in acc. with din 57883, june 1980 parameter test condition symbol value unit reverse voltage v r 6v forward continuous current i f 20 ma surge forward current i fsm 1.5 a power dissipation t 10 sp diss 30 mw parameter test condition part symbol value unit repetitive peak off-state voltage brt11 v drm 400 v brt12 v drm 600 v brt13 v drm 800 v rms on-state current i trms 300 ma single cycle surge current 50 hz i tsm 3a power dissipation p diss 600 mw parameter test condition symbol value unit max. power dissipation p tot 630 mw ambient temperature t amb - 40 to + 100 c storage temperature t stg - 40 to + 150 c insulation test voltage 1) between input/output circuit (climate in acc. with din 40046, part 2, nov. 74) v iso 5300 v rms reference voltage in acc. with vde 0110 b v ref 500 v rms reference voltage in acc. with vde 0110 b (insulation group c) v ref 600 v dc creepage resistance (in acc. with din iec 112/vde 0303, part 1) (group iiia acc. to din vde 0109) cti 175 insulation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? din humidity category, din 40 040 f creepage distance (input/output circuit) 7.2 mm clearance (input/output circuit) 7.2 mm
brt11/ 12/ 13 document number 83689 rev. 1.4, 11-apr-05 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input 2) static air, sitac sol dered in pcb or base plate. output 2) static air, sitac sol dered in pcb or base plate. coupler parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.1 1.35 v reverse current v r = 6 v i r 10 a thermal resistance 2) junction - ambient r thja 750 c/w parameter test condition symbol min ty p. max unit critical rate of rise of off-state voltage v d = 0.67 v drm , t j = 25 c dv/dt cr 10 kv/ s v d = 0.67 v drm , t j = 80 c dv/dt cr 5kv/ s critical rate of rise of voltage at current commutation v d = 0.67 v drm , t j = 25 c, di/dt crq 15 a/ms dv/dt crq 10 kv/ s v d = 0.67 v drm , t j = 80 c, di/dt crq 15 a/ms dv/dt crq 5kv/ s critical rate of rise of on-state current di/dt cr 8a/ s pulse current t p 5 s, f 0 100 hz, di tp /dt 8 a/ s i tp 2a on-state voltage i t = 300 ma v t 2.3 v off-state current t c = 80 c, v drm i d 0.5 100 a holding current v d = 10 v i h 80 500 a thermal resistance 2) junction - ambient r thja r thja 125 c/w parameter test condition symbol min ty p. max unit trigger current v d = 10 v, f - versions i ft 1.2 ma v d = 10 v, h - versions i ft 0.4 2 ma v d = 10 v, m - versions i ft 0.8 3 ma trigger current temperature gradient ? i ft / ? t j 714 a/c capacitance (input-output) v r = 0 v, f = 1 khz c io 2pf
www.vishay.com 4 document number 83689 rev. 1.4, 11-apr-05 brt11/ 12/ 13 vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. typical trigger delay time figure 2. power dissipation 40 to 60 hz line operation figure 3. typical off-state current 17239 t gd = f ( i f / i ft25c ) v d =200v 17240 p tot= ( i trms ) 17241 i d = f ( t j ) v d =800v figre 4.pletriggercrrent figre 5.typialinptcharateriti figre 6.typialotptcharateriti 17242 i ftn= f ( t pif) i ftn normalized to i ft refering to t pif 1m v op=220v, f = 4 0 ...60hz typ. 17243 i f = ? ( v f ) 17244 i t = ? ( v t )
brt11/ 12/ 13 document number 83689 rev. 1.4, 11-apr-05 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) figure 7. current reduction 17245 i trms = ? ( t a) r thja = 125 k/w 3) figre 8.crrentredtion 17246 i trms = ? ( t pin5 ) r thj-pin5 = 16,5 k/w 4) i178014 .008 (.20) .012 (.30) .130 (3.30) .150 (3.81) .130 (3.30) .150 (3.81) .033 (0.84) typ. .300 (7.62) typ. .033 (0.84) typ. .100 (2.54) typ .039 (1.00) min. .018 (0.46) .020 (0.51) .048 (1.22) .052 (1.32) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ . iso method a
www.vishay.com 6 document number 83689 rev. 1.4, 11-apr-05 brt11/ 12/ 13 vishay semiconductors min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
brt11/ 12/ 13 document number 83689 rev. 1.4, 11-apr-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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